Supplier Device Package:
Number of Circuits:
Max Propagation Delay @ V, Max CL:
Découvrez les produits 807
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Series Voltage - Supply Operating Temperature Supplier Device Package Number of Circuits Features Number of Inputs Current - Quiescent (Max) Logic Type Logic Level - Low Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
HEF40106BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC INVERTER SCHMITT 6CH 14DIP
4000B 3 V ~ 15 V -40°C ~ 125°C 14-DIP 6 Schmitt Trigger 6 4μA Inverter 1.5 V ~ 4 V 3.5 V ~ 11 V 3.4mA,3.4mA 60ns @ 15V,50pF
N74F10N,602
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 3CH 3-INP 14DIP
74F 4.5 V ~ 5.5 V 0°C ~ 70°C 14-DIP 3 - 3 - NAND Gate 0.8V 2V 1mA,20mA 5ns @ 5V,50pF
N74F38N,602
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 4CH 2-INP 14DIP
74F 4.5 V ~ 5.5 V 0°C ~ 70°C 14-DIP 4 Open Collector 2 - NAND Gate 0.8V 2V -,64mA 12.5ns @ 5V,50pF
N74F06N,602
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC INVERTER OPEN COL 6CH 14DIP
74F 4.5 V ~ 5.5 V 0°C ~ 70°C 14-DIP 6 Open Collector 6 - Inverter 0.8V 2V -,64mA 6ns @ 5V,50pF
74HC20N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 2CH 4-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 14-DIP 2 - 4 2μA NAND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 15ns @ 6V,50pF
74HC10N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 3CH 3-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 14-DIP 3 - 3 2μA NAND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 16ns @ 6V,50pF
74HC00N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 4CH 2-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 14-DIP 4 - 2 40μA NAND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 7ns @ 6V,50pF
HEF4070BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE XOR 4CH 2-INP 14DIP
4000B 3 V ~ 15 V -40°C ~ 85°C 14-DIP 4 - 2 4μA XOR (Exclusive OR) 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 55ns @ 15V,50pF
HEF4068BP,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 1CH 8-INP 14DIP
4000B 3 V ~ 15 V -40°C ~ 85°C 14-DIP 1 - 8 4μA NAND Gate 1.5 V ~ 4 V 3.5 V ~ 11 V 3mA,3mA 65ns @ 15V,50pF
74HCT30N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 1CH 8-INP 14DIP
74HCT 4.5 V ~ 5.5 V -40°C ~ 125°C 14-DIP 1 - 8 2μA NAND Gate 0.8V 2V 4mA,4mA 28ns @ 4.5V,50pF
74HC03N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 4CH 2-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 14-DIP 4 Open Drain 2 2μA NAND Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V -,5.2mA 16ns @ 6V,50pF
74ABT32N,112
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE OR 4CH 2-INP 14DIP
74ABT 4.5 V ~ 5.5 V -40°C ~ 85°C 14-DIP 4 - 2 50μA OR Gate 0.8V 2V 15mA,20mA 3.4ns @ 5V,50pF
74ABT00N,112
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE NAND 4CH 2-INP 14DIP
74ABT 4.5 V ~ 5.5 V -40°C ~ 85°C 14-DIP 4 - 2 50μA NAND Gate 0.8V 2V 15mA,20mA 3.6ns @ 5V,50pF
74HC4075N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC GATE OR 3CH 3-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 14-DIP 3 - 3 2μA OR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 17ns @ 6V,50pF
74HC04N,652
NXP USA Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC INVERTER 6CH 6-INP 14DIP
74HC 2 V ~ 6 V -40°C ~ 125°C 14-DIP 6 - 6 2μA Inverter 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 14ns @ 6V,50pF
M74HCU04B1R
STMicroelectronics
Enquête
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MOQ: 3000  MPQ: 1
IC INVERTER 6CH 6-INP 14DIP
74HCU 2 V ~ 6 V -55°C ~ 125°C 14-DIP 6 - 6 1μA Inverter 0.3 V ~ 1.2 V 1.7 V ~ 4.8 V 5.2mA,5.2mA 10ns @ 6V,50pF
M74HCT14B1R
STMicroelectronics
Enquête
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MOQ: 3000  MPQ: 1
IC INVERTER SCHMITT 6CH 14DIP
74HCT 4.5 V ~ 5.5 V -55°C ~ 125°C 14-DIP 6 Schmitt Trigger 6 1μA Inverter 0.5 V ~ 0.6 V 1.9 V ~ 2.1 V 4mA,4mA 30ns @ 4.5V,50pF
M74HCT04B1R
STMicroelectronics
Enquête
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MOQ: 3000  MPQ: 1
IC INVERTER 6CH 6-INP 14DIP
74HCT 4.5 V ~ 5.5 V -55°C ~ 125°C 14-DIP 6 - 6 1μA Inverter 0.8V 2V 4mA,4mA 18ns @ 4.5V,50pF
M74HCT00B1R
STMicroelectronics
Enquête
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MOQ: 5000  MPQ: 1
IC GATE NAND 4CH 2-INP 14DIP
74HCT 4.5 V ~ 5.5 V -55°C ~ 125°C 14-DIP 4 - 2 1μA NAND Gate 0.8V 2V 4mA,4mA 19ns @ 4.5V,50pF
M74HC4075B1R
STMicroelectronics
Enquête
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MOQ: 1000  MPQ: 1
IC GATE OR 3CH 3-INP 14DIP
74HC 2 V ~ 6 V -55°C ~ 125°C 14-DIP 3 - 3 1μA OR Gate 0.5 V ~ 1.8 V 1.5 V ~ 4.2 V 5.2mA,5.2mA 14ns @ 6V,50pF