- Packaging:
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- Operating Temperature:
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- Package / Case:
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- Features:
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- Logic Level - Low:
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- Logic Level - High:
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- Max Propagation Delay @ V, Max CL:
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- Conditions sélectionnées:
Découvrez les produits 14
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Features | Number of Inputs | Logic Type | Logic Level - Low | Logic Level - High | Max Propagation Delay @ V, Max CL | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Features | Number of Inputs | Logic Type | Logic Level - Low | Logic Level - High | Max Propagation Delay @ V, Max CL | ||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE NAND 1CH 2-INP DFN0808-4
|
Tape & Reel (TR) | -40°C ~ 125°C | 4-XFDFN Exposed Pad | - | 2 | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 6.5ns @ 3.3V,30pF | ||||
Diodes Incorporated |
4,989
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP DFN0808-4
|
Cut Tape (CT) | -40°C ~ 125°C | 4-XFDFN Exposed Pad | - | 2 | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 6.5ns @ 3.3V,30pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 1CH 2-INP DFN0808-4
|
- | -40°C ~ 125°C | 4-XFDFN Exposed Pad | - | 2 | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 6.5ns @ 3.3V,30pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE OR 1CH 2-INP DFN0808-4
|
Tape & Reel (TR) | -40°C ~ 125°C (TA) | 4-XFDFN Exposed Pad | - | 2 | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 6.4ns @ 3.3V,30pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE XOR 1CH 2-INP DFN0808-4
|
Tape & Reel (TR) | -40°C ~ 125°C (TA) | 4-XFDFN Exposed Pad | - | 2 | XOR (Exclusive OR) | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 7.1ns @ 3.3V,30pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE XOR 1CH 2-INP DFN0808-4
|
Tape & Reel (TR) | -40°C ~ 125°C | 4-XFDFN Exposed Pad | - | 2 | XOR (Exclusive OR) | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 7.1ns @ 3.3V,30pF | ||||
Diodes Incorporated |
4,480
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE XOR 1CH 2-INP DFN0808-4
|
Cut Tape (CT) | -40°C ~ 125°C | 4-XFDFN Exposed Pad | - | 2 | XOR (Exclusive OR) | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 7.1ns @ 3.3V,30pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE XOR 1CH 2-INP DFN0808-4
|
- | -40°C ~ 125°C | 4-XFDFN Exposed Pad | - | 2 | XOR (Exclusive OR) | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 7.1ns @ 3.3V,30pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE NOR 1CH 2-INP DFN0808-4
|
Tape & Reel (TR) | -40°C ~ 125°C (TA) | 4-XFDFN Exposed Pad | - | 2 | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 6.4ns @ 3.3V,30pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE NOR 1CH 2-INP DFN0808-4
|
Tape & Reel (TR) | -40°C ~ 125°C | 4-XFDFN Exposed Pad | - | 2 | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 6.4ns @ 3.3V,30pF | ||||
Diodes Incorporated |
4,425
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NOR 1CH 2-INP DFN0808-4
|
Cut Tape (CT) | -40°C ~ 125°C | 4-XFDFN Exposed Pad | - | 2 | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 6.4ns @ 3.3V,30pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NOR 1CH 2-INP DFN0808-4
|
- | -40°C ~ 125°C | 4-XFDFN Exposed Pad | - | 2 | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 6.4ns @ 3.3V,30pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC INVERTER SCHMITT 1CH DFN0808
|
Tape & Reel (TR) | -40°C ~ 125°C | 4-UFDFN Exposed Pad | Schmitt Trigger | 1 | Inverter | 0.15 V ~ 0.88 V | 0.65 V ~ 2.32 V | 6.1ns @ 3.3V,30pF | ||||
Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE NAND 1CH 2-INP DFN0808-4
|
Tape & Reel (TR) | -40°C ~ 125°C (TA) | 4-XFDFN Exposed Pad | - | 2 | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 6.5ns @ 3.3V,30pF |