- Packaging:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Features:
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- Logic Level - Low:
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- Current - Output High, Low:
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- Max Propagation Delay @ V, Max CL:
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- Conditions sélectionnées:
Découvrez les produits 15
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Package / Case | Supplier Device Package | Mounting Type | Features | Logic Type | Logic Level - Low | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Package / Case | Supplier Device Package | Mounting Type | Features | Logic Type | Logic Level - Low | Current - Output High, Low | Max Propagation Delay @ V, Max CL | ||
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
Tube | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | Open Drain | NAND Gate | 0.5 V ~ 1.8 V | -,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14DIP
|
Tube | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | - | NAND Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE NOR 4CH 2-INP 14DIP
|
Tube | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | - | NOR Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE NAND SCHMITT 4CH 14DIP
|
Tube | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | Schmitt Trigger | NAND Gate | 0.3 V ~ 1.5 V | 5.2mA,5.2mA | 19ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
2,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE NOR 4CH 2-INP 14SOP
|
Tape & Reel (TR) | 14-SOIC (0.173",4.40mm Width) | 14-SOP | Surface Mount | - | NOR Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
1,620
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NOR 4CH 2-INP 14SOP
|
Cut Tape (CT) | 14-SOIC (0.173",4.40mm Width) | 14-SOP | Surface Mount | - | NOR Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NOR 4CH 2-INP 14SOP
|
- | 14-SOIC (0.173",4.40mm Width) | 14-SOP | Surface Mount | - | NOR Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE OR 4CH 2-INP 14SOP
|
Tape & Reel (TR) | 14-SOIC (0.209",5.30mm Width) | 14-SOP | Surface Mount | - | OR Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
1,804
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE OR 4CH 2-INP 14SOP
|
Cut Tape (CT) | 14-SOIC (0.209",5.30mm Width) | 14-SOP | Surface Mount | - | OR Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE OR 4CH 2-INP 14SOP
|
- | 14-SOIC (0.209",5.30mm Width) | 14-SOP | Surface Mount | - | OR Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14SOP
|
Tape & Reel (TR) | 14-SOIC (0.209",5.30mm Width) | 14-SOP | Surface Mount | - | NAND Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14SOP
|
Cut Tape (CT) | 14-SOIC (0.209",5.30mm Width) | 14-SOP | Surface Mount | - | NAND Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 4CH 2-INP 14SOP
|
- | 14-SOIC (0.209",5.30mm Width) | 14-SOP | Surface Mount | - | NAND Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC GATE AND 4CH 2-INP 14DIP
|
Tube | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | - | AND Gate | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 13ns @ 6V,50pF | ||||
Toshiba Semiconductor and Storage |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
|
Tube | 14-DIP (0.300",7.62mm) | 14-DIP | Through Hole | - | XOR (Exclusive OR) | 0.5 V ~ 1.8 V | 5.2mA,5.2mA | 17ns @ 6V,50pF |