- Features：
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- Logic Level - Low：
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- Current - Output High, Low：
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- Max Propagation Delay @ V, Max CL：
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- Conditions sélectionnées:
Découvrez les produits 9
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Number of Circuits | Features | Number of Inputs | Logic Type | Logic Level - Low | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Number of Circuits | Features | Number of Inputs | Logic Type | Logic Level - Low | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE NAND 4CH 2-INP 14DIP
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4 | Open Drain | 2 | NAND Gate | 0.5 V ~ 1.8 V | -，5.2mA | 13ns @ 6V，50pF | ||
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC GATE NAND 4CH 2-INP 14DIP
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4 | - | 2 | NAND Gate | 0.5 V ~ 1.8 V | 5.2mA，5.2mA | 13ns @ 6V，50pF | ||
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
|
IC GATE NOR 4CH 2-INP 14DIP
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4 | - | 2 | NOR Gate | 0.5 V ~ 1.8 V | 5.2mA，5.2mA | 13ns @ 6V，50pF | ||
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC INVERTER 6CH 6-INP 14DIP
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6 | - | 6 | Inverter | 0.5 V ~ 1.8 V | 5.2mA，5.2mA | 13ns @ 6V，50pF | ||
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC GATE NAND SCHMITT 4CH 14DIP
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4 | Schmitt Trigger | 2 | NAND Gate | 0.3 V ~ 1.5 V | 5.2mA，5.2mA | 19ns @ 6V，50pF | ||
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC INVERTER SCHMITT 6CH 14DIP
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6 | Schmitt Trigger | 6 | Inverter | 0.3 V ~ 1.5 V | 5.2mA，5.2mA | 21ns @ 6V，50pF | ||
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
|
IC GATE AND 4CH 2-INP 14DIP
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4 | - | 2 | AND Gate | 0.5 V ~ 1.8 V | 5.2mA，5.2mA | 13ns @ 6V，50pF | |||
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Toshiba Semiconductor and Storage |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE NAND 3CH 3-INP 14DIP
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3 | - | 3 | NAND Gate | 0.5 V ~ 1.8 V | 5.2mA，5.2mA | 13ns @ 6V，50pF | |||
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Toshiba Semiconductor and Storage |
Enquête
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- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE XOR 4CH 2-INP 14DIP
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4 | - | 2 | XOR (Exclusive OR) | 0.5 V ~ 1.8 V | 5.2mA，5.2mA | 17ns @ 6V，50pF |
