- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Features：
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- Current - Quiescent (Max)：
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- Logic Type：
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- Logic Level - Low：
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- Logic Level - High：
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- Current - Output High, Low：
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- Max Propagation Delay @ V, Max CL：
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- Conditions sélectionnées:
Découvrez les produits 1,108
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Number of Circuits | Features | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Number of Circuits | Features | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | Max Propagation Delay @ V, Max CL | |
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STMicroelectronics |
8,432
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC INVERTER 1CH 1-INP 6DFN
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- | 1.2 V ~ 3.6 V | -40°C ~ 85°C | 6-UFDFN | 6-DFN (1.2x1.0) | 1 | - | 1 | 100nA | Inverter | 0.7 V ~ 0.8 V | 1.6 V ~ 2 V | 10mA，10mA | 3.8ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 5000 MPQ: 1
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IC GATE NAND 1CH 2-INP DFN0808-4
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Tape & Reel (TR) | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | - | 2 | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
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Diodes Incorporated |
4,989
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE NAND 1CH 2-INP DFN0808-4
|
Cut Tape (CT) | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | - | 2 | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC GATE NAND 1CH 2-INP DFN0808-4
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- | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | - | 2 | 500nA | NAND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.5ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 5000 MPQ: 1
|
IC GATE OR 1CH 2-INP DFN0808-4
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Tape & Reel (TR) | 0.8 V ~ 3.6 V | -40°C ~ 125°C (TA) | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | - | 2 | 500nA | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 5000 MPQ: 1
|
IC GATE OR 1CH 2-INP 4X2DFN
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Tape & Reel (TR) | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | 4-X2DFN (0.8x0.8) | 1 | - | 2 | 500nA | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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Diodes Incorporated |
4,835
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE OR 1CH 2-INP 4X2DFN
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Cut Tape (CT) | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | 4-X2DFN (0.8x0.8) | 1 | - | 2 | 500nA | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC GATE OR 1CH 2-INP 4X2DFN
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- | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | 4-X2DFN (0.8x0.8) | 1 | - | 2 | 500nA | OR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 5000 MPQ: 1
|
IC GATE XOR 1CH 2-INP DFN0808-4
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Tape & Reel (TR) | 0.8 V ~ 3.6 V | -40°C ~ 125°C (TA) | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | - | 2 | 500nA | XOR (Exclusive OR) | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 7.1ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 5000 MPQ: 1
|
IC GATE XOR 1CH 2-INP DFN0808-4
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Tape & Reel (TR) | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | - | 2 | 500nA | XOR (Exclusive OR) | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 7.1ns @ 3.3V，30pF | ||
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Diodes Incorporated |
4,480
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE XOR 1CH 2-INP DFN0808-4
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Cut Tape (CT) | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | - | 2 | 500nA | XOR (Exclusive OR) | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 7.1ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
IC GATE XOR 1CH 2-INP DFN0808-4
|
- | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | - | 2 | 500nA | XOR (Exclusive OR) | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 7.1ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 5000 MPQ: 1
|
IC GATE NOR 1CH 2-INP DFN0808-4
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Tape & Reel (TR) | 0.8 V ~ 3.6 V | -40°C ~ 125°C (TA) | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | - | 2 | 500nA | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
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- |
-
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MOQ: 5000 MPQ: 1
|
IC GATE NOR 1CH 2-INP DFN0808-4
|
Tape & Reel (TR) | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | - | 2 | 500nA | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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Diodes Incorporated |
4,425
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE NOR 1CH 2-INP DFN0808-4
|
Cut Tape (CT) | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | - | 2 | 500nA | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE NOR 1CH 2-INP DFN0808-4
|
- | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | - | 2 | 500nA | NOR Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.4ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 5000 MPQ: 1
|
IC GATE AND 1CH 2-INP 4X2DFN
|
Tape & Reel (TR) | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | 4-X2DFN (0.8x0.8) | 1 | - | 2 | 500nA | AND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.2ns @ 3.3V，30pF | ||
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Diodes Incorporated |
4,022
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 2-INP 4X2DFN
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Cut Tape (CT) | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | 4-X2DFN (0.8x0.8) | 1 | - | 2 | 500nA | AND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.2ns @ 3.3V，30pF | ||
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|
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Diodes Incorporated |
4,022
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 2-INP 4X2DFN
|
- | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | 4-X2DFN (0.8x0.8) | 1 | - | 2 | 500nA | AND Gate | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 6.2ns @ 3.3V，30pF | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 5000 MPQ: 1
|
IC INVERTER 1CH 1-INP 4X2DFN
|
Tape & Reel (TR) | 0.8 V ~ 3.6 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | 4-X2DFN (0.8x0.8) | 1 | - | 1 | 500nA | Inverter | 0.7 V ~ 0.9 V | 1.6 V ~ 2 V | 4mA，4mA | 5.4ns @ 3.3V，30pF |
