Découvrez les produits 10
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Operating Temperature Features Number of Inputs Current - Quiescent (Max) Logic Type Logic Level - Low Logic Level - High Current - Output High, Low Max Propagation Delay @ V, Max CL
74LVC2G86HK3-7
Diodes Incorporated
5,000
3 jours
-
MOQ: 5000  MPQ: 1
IC GATE XOR 2CH 2-INP DFN1410-8
Tape & Reel (TR) -40°C ~ 125°C - 2 40μA XOR (Exclusive OR) - - 32mA,32mA 5.6ns @ 5V,50pF
74LVC2G86HK3-7
Diodes Incorporated
6,113
3 jours
-
MOQ: 1  MPQ: 1
IC GATE XOR 2CH 2-INP DFN1410-8
Cut Tape (CT) -40°C ~ 125°C - 2 40μA XOR (Exclusive OR) - - 32mA,32mA 5.6ns @ 5V,50pF
74LVC2G86HK3-7
Diodes Incorporated
6,113
3 jours
-
MOQ: 1  MPQ: 1
IC GATE XOR 2CH 2-INP DFN1410-8
- -40°C ~ 125°C - 2 40μA XOR (Exclusive OR) - - 32mA,32mA 5.6ns @ 5V,50pF
74LVC2G00HK3-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE NAND 2CH 2-INP DFN1410-8
Tape & Reel (TR) -40°C ~ 125°C - 2 40μA NAND Gate - - 32mA,32mA 4.2ns @ 5V,50pF
74LVC2G00HK3-7
Diodes Incorporated
1,567
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 2CH 2-INP DFN1410-8
Cut Tape (CT) -40°C ~ 125°C - 2 40μA NAND Gate - - 32mA,32mA 4.2ns @ 5V,50pF
74LVC2G00HK3-7
Diodes Incorporated
1,567
3 jours
-
MOQ: 1  MPQ: 1
IC GATE NAND 2CH 2-INP DFN1410-8
- -40°C ~ 125°C - 2 40μA NAND Gate - - 32mA,32mA 4.2ns @ 5V,50pF
74LVC2G02HK3-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE NOR 2CH 2-INP DFN1410-8
Tape & Reel (TR) -40°C ~ 125°C - 2 40μA NOR Gate - - 32mA,32mA 5.5ns @ 5V,50pF
74LVC2G08HK3-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE AND 2CH 2-INP DFN1410-8
Tape & Reel (TR) -40°C ~ 125°C - 2 40μA AND Gate - 1.3 V ~ 2.2 V 32mA,32mA 4.8ns @ 5V,50pF
74LVC2G32HK3-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE OR 2CH 2-INP DFN1410-8
Tape & Reel (TR) -40°C ~ 125°C - 2 40μA OR Gate - - 32mA,32mA 4ns @ 5V,50pF
74LVC2G38HK3-7
Diodes Incorporated
Enquête
-
-
MOQ: 5000  MPQ: 1
IC GATE NAND 2CH 4-INP DFN1410-8
Tape & Reel (TR) -40°C ~ 125°C (TA) Open Drain 4 10μA NAND Gate 0.1 V ~ 0.8 V - -,32mA 3.3ns @ 3.3V,50pF