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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Logic Level - Low：
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- Logic Level - High：
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- Current - Output High, Low：
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- Conditions sélectionnées:
Découvrez les produits 28
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Number of Circuits | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Number of Circuits | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | Current - Output High, Low | |
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ON Semiconductor |
14,666
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE NOR 1CH 3-INP SC70-6
|
7SZ | 1.65 V ~ 5.5 V | -40°C ~ 85°C | 6-TSSOP，SC-88，SOT-363 | SC-70-6 | 1 | 3 | 2μA | NOR Gate | - | - | 32mA，32mA | ||
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Diodes Incorporated |
29,500
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE NOR 2CH 2-INP DFN2010-8
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN2010-8 | 2 | 2 | 40μA | NOR Gate | - | - | 32mA，32mA | ||
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Diodes Incorporated |
25,173
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE AND 1CH 2-INP DFN1010-6
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XDFN | X1-DFN1010-6 | 1 | 2 | 200μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
8,532
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE OR 1CH 2-INP DFN1410-6
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1410-6 | 1 | 2 | 200μA | OR Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
4,027
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE NAND 1CH 2-INP DFN1410-6
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1410-6 | 1 | 2 | 200μA | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
41
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 2-INP DFN1010-6
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 1 | 2 | 200μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
4,225
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE OR 1CH 2-INP DFN1010-6
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 1 | 2 | 200μA | OR Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
3,130
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE XOR 1CH 2-INP SOT553
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74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | SOT-553 | SOT-553 | 1 | 2 | 200μA | XOR (Exclusive OR) | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
1,568
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE NAND 1CH 2-INP DFN1010-6
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74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 1 | 2 | 200μA | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
4,862
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE NOR 2CH 2-INP DFN1210-8
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74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN1210-8 | 2 | 2 | 40μA | NOR Gate | - | - | 32mA，32mA | ||
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Diodes Incorporated |
3,900
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE NAND 1CH 2-INP DFN0808-4
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74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | 2 | 200μA | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
2,834
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE OR 1CH 2-INP DFN0808-4
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74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | X2-DFN0808-4 | 1 | 2 | 200μA | OR Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
2,005
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE AND 1CH 2-INP 4X2DFN
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74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 4-XFDFN Exposed Pad | 4-X2DFN (0.8x0.8) | 1 | 2 | 200μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
4,900
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE NAND 1CH 2-INP DFN1409-6
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74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1409-6 | 1 | 2 | 200μA | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
3,035
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE XOR 1CH 2-INP DFN1410-6
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74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1410-6 | 1 | 2 | 200μA | XOR (Exclusive OR) | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
5,758
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE OR 1CH 2-INP DFN1010-6
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XDFN | X1-DFN1010-6 | 1 | 2 | 200μA | OR Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
4,380
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE XOR 1CH 2-INP DFN1010-6
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XDFN | X1-DFN1010-6 | 1 | 2 | 200μA | XOR (Exclusive OR) | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
4,205
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE NOR 1CH 2-INP DFN1010-6
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XDFN | X1-DFN1010-6 | 1 | 2 | 200μA | NOR Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Diodes Incorporated |
2,016
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE NAND 1CH 2-INP DFN1010-6
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XDFN | X1-DFN1010-6 | 1 | 2 | 200μA | NAND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA | ||
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Nexperia USA Inc. |
2,704
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC GATE XOR 1CH 3-INP 6TSSOP
|
74LVC | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-TSSOP，SC-88，SOT-363 | 6-TSSOP | 1 | 3 | 4μA | XOR (Exclusive OR) | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | 32mA，32mA |
