- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Logic Type：
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- Logic Level - Low：
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- Logic Level - High：
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- Conditions sélectionnées:
Découvrez les produits 19
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Number of Circuits | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Number of Circuits | Number of Inputs | Current - Quiescent (Max) | Logic Type | Logic Level - Low | Logic Level - High | |
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Nexperia USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 10000 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | 8-X2SON (1.35x0.8) | 2 | 2 | 4μA | NAND Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | ||
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Nexperia USA Inc. |
10,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | 8-X2SON (1.35x0.8) | 2 | 2 | 4μA | NAND Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | ||
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Nexperia USA Inc. |
10,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
- | 3.3 V ~ 5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | 8-X2SON (1.35x0.8) | 2 | 2 | 4μA | NAND Gate | 0.1 V ~ 0.8 V | 0.95 V ~ 3.4 V | ||
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Nexperia USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 10000 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Tape & Reel (TR) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | 8-X2SON (1.35x0.8) | 2 | 2 | 4μA | NAND Gate | 0.1 V ~ 0.8 V | - | ||
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Nexperia USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
Cut Tape (CT) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | 8-X2SON (1.35x0.8) | 2 | 2 | 4μA | NAND Gate | 0.1 V ~ 0.8 V | - | ||
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|
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Nexperia USA Inc. |
10,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP 8X2SON
|
- | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN Exposed Pad | 8-X2SON (1.35x0.8) | 2 | 2 | 4μA | NAND Gate | 0.1 V ~ 0.8 V | - | ||
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Diodes Incorporated |
30,000
|
3 jours |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE AND 1CH 3-INP DFN1010-6
|
Tape & Reel (TR) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 1 | 3 | 40μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | ||
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Diodes Incorporated |
7,749
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE AND 1CH 3-INP DFN1010-6
|
Cut Tape (CT) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 1 | 3 | 40μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE AND 1CH 3-INP DFN1010-6
|
- | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 6-XFDFN | X2-DFN1010-6 | 1 | 3 | 40μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 5000 MPQ: 1
|
IC GATE NAND 2CH 2-INP DFN1210-8
|
Tape & Reel (TR) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN1210-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||
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Diodes Incorporated |
3,065
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP DFN1210-8
|
Cut Tape (CT) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN1210-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||
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Diodes Incorporated |
3,065
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP DFN1210-8
|
- | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN1210-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 5000 MPQ: 1
|
IC GATE NAND 2CH 2-INP DFN1410-8
|
Tape & Reel (TR) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN1410-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||
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Diodes Incorporated |
1,567
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP DFN1410-8
|
Cut Tape (CT) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN1410-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||
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|
|
Diodes Incorporated |
1,567
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP DFN1410-8
|
- | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN1410-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||
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Diodes Incorporated |
Enquête
|
- |
-
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MOQ: 5000 MPQ: 1
|
IC GATE NAND 2CH 2-INP DFN2010-8
|
Tape & Reel (TR) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN2010-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||
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|
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Diodes Incorporated |
1,269
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP DFN2010-8
|
Cut Tape (CT) | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN2010-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||
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|
|
Diodes Incorporated |
1,269
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE NAND 2CH 2-INP DFN2010-8
|
- | 1.65 V ~ 5.5 V | -40°C ~ 125°C | 8-XFDFN | X2-DFN2010-8 | 2 | 2 | 40μA | NAND Gate | - | - | ||
|
|
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Diodes Incorporated |
Enquête
|
- |
-
|
MOQ: 5000 MPQ: 1
|
IC GATE AND 1CH 3-INP DFN1010-6
|
Tape & Reel (TR) | 1.65 V ~ 5.5 V | -40°C ~ 125°C (TA) | 6-XFDFN | X2-DFN1010-6 | 1 | 3 | 40μA | AND Gate | 0.7 V ~ 0.8 V | 1.7 V ~ 2 V |
