Output Type:
Voltage - Input Offset (Max):
Current - Quiescent (Max):
Propagation Delay (Max):
Découvrez les produits 12
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Output Type Voltage - Input Offset (Max) Current - Quiescent (Max) Propagation Delay (Max)
TC75W57FU,LF
Toshiba Semiconductor and Storage
12,000
3 jours
-
MOQ: 3000  MPQ: 1
IC COMP GP CMOS DUAL SM8
Tape & Reel (TR) Push-Pull 7mV @ 5V 400μA 140ns
TC75W57FU,LF
Toshiba Semiconductor and Storage
12,509
3 jours
-
MOQ: 1  MPQ: 1
IC COMP GP CMOS DUAL SM8
Cut Tape (CT) Push-Pull 7mV @ 5V 400μA 140ns
TC75W57FU,LF
Toshiba Semiconductor and Storage
12,509
3 jours
-
MOQ: 1  MPQ: 1
IC COMP GP CMOS DUAL SM8
- Push-Pull 7mV @ 5V 400μA 140ns
TC75W56FU,LF
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
IC COMP GP CMOS DUAL SM8
Tape & Reel (TR) Push-Pull 7mV @ 5V 40μA 680ns
TC75W56FU,LF
Toshiba Semiconductor and Storage
2,018
3 jours
-
MOQ: 1  MPQ: 1
IC COMP GP CMOS DUAL SM8
Cut Tape (CT) Push-Pull 7mV @ 5V 40μA 680ns
TC75W56FU,LF
Toshiba Semiconductor and Storage
2,018
3 jours
-
MOQ: 1  MPQ: 1
IC COMP GP CMOS DUAL SM8
- Push-Pull 7mV @ 5V 40μA 680ns
TC75W59FU,LF
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
IC COMP GP CMOS DUAL SM8
Tape & Reel (TR) Open Drain 1mV @ 5V 220μA 200ns
TC75W59FU,LF
Toshiba Semiconductor and Storage
2,075
3 jours
-
MOQ: 1  MPQ: 1
IC COMP GP CMOS DUAL SM8
Cut Tape (CT) Open Drain 1mV @ 5V 220μA 200ns
TC75W59FU,LF
Toshiba Semiconductor and Storage
2,075
3 jours
-
MOQ: 1  MPQ: 1
IC COMP GP CMOS DUAL SM8
- Open Drain 1mV @ 5V 220μA 200ns
TC75W58FU,LF
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
IC COMP GP CMOS DUAL SM8
Tape & Reel (TR) Open Drain 7mV @ 5V 22μA 800ns
TC75W58FU,LF
Toshiba Semiconductor and Storage
1,473
3 jours
-
MOQ: 1  MPQ: 1
IC COMP GP CMOS DUAL SM8
Cut Tape (CT) Open Drain 7mV @ 5V 22μA 800ns
TC75W58FU,LF
Toshiba Semiconductor and Storage
1,473
3 jours
-
MOQ: 1  MPQ: 1
IC COMP GP CMOS DUAL SM8
- Open Drain 7mV @ 5V 22μA 800ns