Operating Temperature:
Number of Circuits:
Output Type:
-3db Bandwidth:
Découvrez les produits 155
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Operating Temperature Package / Case Supplier Device Package Number of Circuits Mounting Type Current - Supply Output Type Amplifier Type Current - Output / Channel Slew Rate -3db Bandwidth Gain Bandwidth Product Current - Input Bias Voltage - Input Offset Voltage - Supply, Single/Dual (±)
TC75S60FU(TE85L,F)
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
IC OPAMP GP USV
Tape & Reel (TR) -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV 1 Surface Mount 330μA - General Purpose 1.25mA 5.1 V/μs - - 1pA 2mV 1.8 V ~ 7 V,±0.9 V ~ 3.5 V
TLP7920(F
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 50  MPQ: 1
IC OP AMP ISOLATION 230KHZ 8DIP
Tube -40°C ~ 105°C 8-DIP (0.300",7.62mm) 8-DIP 1 Through Hole 12mA Differential Isolation - - 230kHz - 5.5nA 730μV 4.5 V ~ 5.5 V
TLP7920(D4-B,F
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 50  MPQ: 1
ISOLATION AMPLIFIER; ANALOG OUTP
Tube -40°C ~ 105°C 8-DIP (0.300",7.62mm) 8-DIP 1 Through Hole 12mA Differential Isolation - - 230kHz - 5.5nA 730μV 4.5 V ~ 5.5 V
TC75W60FK(TE85L,F)
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
IC OPAMP GP 8SSOP
Tape & Reel (TR) -40°C ~ 85°C 8-VFSOP (0.091",2.30mm Width) US8 2 Surface Mount 660μA - General Purpose 1.25mA 5.1 V/μs - - 1pA 2mV 1.8 V ~ 7 V,±0.9 V ~ 3.5 V
TC75W60FU(TE12L,F)
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
IC OPAMP GP 8SSOP
Tape & Reel (TR) -40°C ~ 85°C 8-TSSOP,8-MSOP (0.110",2.80mm Width) SM8 2 Surface Mount 660μA - General Purpose 1.25mA 5.1 V/μs - - 1pA 2mV 1.8 V ~ 7 V,±0.9 V ~ 3.5 V
TC75S101FE,LM(T
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
IC OP AMP GP CMOS ESV
Tape & Reel (TR) -40°C ~ 85°C SOT-553 ESV 1 Surface Mount 63μA - General Purpose 1.5mA 0.15 V/μs - - 0.1pA 1.2mV 1.5 V ~ 5.5 V,±0.75 V ~ 2.75 V
TC75S101FE,LM(T
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC OP AMP GP CMOS ESV
Cut Tape (CT) -40°C ~ 85°C SOT-553 ESV 1 Surface Mount 63μA - General Purpose 1.5mA 0.15 V/μs - - 0.1pA 1.2mV 1.5 V ~ 5.5 V,±0.75 V ~ 2.75 V
TC75S101FE,LM(T
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC OP AMP GP CMOS ESV
- -40°C ~ 85°C SOT-553 ESV 1 Surface Mount 63μA - General Purpose 1.5mA 0.15 V/μs - - 0.1pA 1.2mV 1.5 V ~ 5.5 V,±0.75 V ~ 2.75 V
TC75S55FU(TE85L,F)
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC OP AMP GP CMOS USV
Cut Tape (CT) -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV 1 Surface Mount 10μA - General Purpose 700μA 0.7 V/μs - - 1pA 2mV 3.5 V ~ 7 V,±0.9 V ~ 1.8 V
TC75S55FU(TE85L,F)
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
IC OP AMP GP CMOS USV
- -40°C ~ 85°C 5-TSSOP,SC-70-5,SOT-353 USV 1 Surface Mount 10μA - General Purpose 700μA 0.7 V/μs - - 1pA 2mV 3.5 V ~ 7 V,±0.9 V ~ 1.8 V
TC75S67TU,LF
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 3000  MPQ: 1
X34 OP-AMP (CMOS) LOW CURRENT CO
Tape & Reel (TR) -40°C ~ 85°C 6-SMD (5 Leads),Flat Lead UFV 1 Surface Mount 430μA - CMOS 4mA 1 V/μs - 3.5MHz 1pA 500μV 2.2 V ~ 5.5 V
TC75S67TU,LF
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
X34 OP-AMP (CMOS) LOW CURRENT CO
Cut Tape (CT) -40°C ~ 85°C 6-SMD (5 Leads),Flat Lead UFV 1 Surface Mount 430μA - CMOS 4mA 1 V/μs - 3.5MHz 1pA 500μV 2.2 V ~ 5.5 V
TC75S67TU,LF
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 1  MPQ: 1
X34 OP-AMP (CMOS) LOW CURRENT CO
- -40°C ~ 85°C 6-SMD (5 Leads),Flat Lead UFV 1 Surface Mount 430μA - CMOS 4mA 1 V/μs - 3.5MHz 1pA 500μV 2.2 V ~ 5.5 V
TLP7820(D4,E
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 75  MPQ: 1
ISOLATION AMPLIFIER; ANALOG OUTP
- -40°C ~ 105°C 8-SOIC (0.295",7.50mm Width) 8-SO 1 Surface Mount 12mA Differential Isolation - - 230kHz - 5.5nA 900μV 4.5 V ~ 5.5 V
TLP7820(E
Toshiba Semiconductor and Storage
Enquête
-
-
MOQ: 75  MPQ: 1
ISOLATION AMPLIFIER; ANALOG OUTP
- -40°C ~ 105°C 8-SOIC (0.295",7.50mm Width) 8-SO 1 Surface Mount 12mA Differential Isolation - - 230kHz - 5.5nA 900μV 4.5 V ~ 5.5 V