Series:
Number of Circuits:
Current - Output / Channel:
-3db Bandwidth:
Gain Bandwidth Product:
Découvrez les produits 74
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Operating Temperature Package / Case Supplier Device Package Number of Circuits Mounting Type Current - Supply Amplifier Type Current - Output / Channel Slew Rate -3db Bandwidth Gain Bandwidth Product Current - Input Bias Voltage - Input Offset Voltage - Supply, Single/Dual (±)
NE5517AN
ON Semiconductor
Enquête
-
-
MOQ: 450  MPQ: 1
IC OPAMP TRANSCOND 2MHZ 16DIP
Tube - 0°C ~ 70°C 16-DIP (0.300",7.62mm) 16-DIP 2 Through Hole 2.6mA Transconductance 650μA 50 V/μs - 2MHz 400nA 400μV 4 V ~ 44 V,±2 V ~ 22 V
NE5517ANG
ON Semiconductor
Enquête
-
-
MOQ: 450  MPQ: 1
IC OPAMP TRANSCOND 2MHZ 16DIP
Tube - 0°C ~ 70°C 16-DIP (0.300",7.62mm) 16-DIP 2 Through Hole 2.6mA Transconductance 650μA 50 V/μs - 2MHz 400nA 400μV 4 V ~ 44 V,±2 V ~ 22 V
NE5517D
ON Semiconductor
Enquête
-
-
MOQ: 480  MPQ: 1
IC OPAMP TRANSCOND 2MHZ 16SOIC
Tube - 0°C ~ 70°C 16-SOIC (0.154",3.90mm Width) 16-SOIC 2 Surface Mount 2.6mA Transconductance 650μA 50 V/μs - 2MHz 400nA 400μV 4 V ~ 44 V,±2 V ~ 22 V
NE5517DR2
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC OPAMP TRANSCOND 2MHZ 16SOIC
Tape & Reel (TR) - 0°C ~ 70°C 16-SOIC (0.154",3.90mm Width) 16-SOIC 2 Surface Mount 2.6mA Transconductance 650μA 50 V/μs - 2MHz 400nA 400μV 4 V ~ 44 V,±2 V ~ 22 V
NE5517N
ON Semiconductor
Enquête
-
-
MOQ: 450  MPQ: 1
IC OPAMP TRANSCOND 2MHZ 16DIP
Tube - 0°C ~ 70°C 16-DIP (0.300",7.62mm) 16-DIP 2 Through Hole 2.6mA Transconductance 650μA 50 V/μs - 2MHz 400nA 400μV 4 V ~ 44 V,±2 V ~ 22 V
NE5517NG
ON Semiconductor
Enquête
-
-
MOQ: 450  MPQ: 1
IC OPAMP TRANSCOND 2MHZ 16DIP
Tube - 0°C ~ 70°C 16-DIP (0.300",7.62mm) 16-DIP 2 Through Hole 2.6mA Transconductance 650μA 50 V/μs - 2MHz 400nA 400μV 4 V ~ 44 V,±2 V ~ 22 V
LM13700N
Texas Instruments
Enquête
-
-
MOQ: 400  MPQ: 1
IC OPAMP TRANSCOND 2MHZ 16DIP
Tube - 0°C ~ 70°C 16-DIP (0.300",7.62mm) 16-PDIP 2 Through Hole 2.6mA Transconductance 650μA 50 V/μs - 2MHz 1μA 300μV 10 V ~ 36 V,±5 V ~ 18 V
TS12011ITD1022
Silicon Labs
Enquête
-
-
MOQ: 100  MPQ: 1
IC OA/REF/COMP 0.8V P-P 10UDFN
Strip - -40°C ~ 85°C 10-UFDFN Exposed Pad 10-TDFN (2x2) 1 Surface Mount 1.1μA General Purpose 500μA 0.006 V/μs - 15kHz 20nA 3.5mV 0.8 V ~ 2.5 V
TS12011ITD1022T
Silicon Labs
Enquête
-
-
MOQ: 3000  MPQ: 1
IC OA/REF/COMP 0.8V P-P 10UDFN
Tape & Reel (TR) - -40°C ~ 85°C 10-UFDFN Exposed Pad 10-TDFN (2x2) 1 Surface Mount 1.1μA General Purpose 500μA 0.006 V/μs - 15kHz 20nA 3.5mV 0.8 V ~ 2.5 V
TS12011ITD1022T
Touchstone Semiconductor
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC OPAMP GP 15KHZ RRO 10TDFN
Tape & Reel (TR) - -40°C ~ 85°C 10-UFDFN Exposed Pad 10-TDFN (2x2) 1 Surface Mount 1.1μA General Purpose 500μA 0.006 V/μs - 15kHz 20nA 3.5mV 0.8 V ~ 2.5 V
NE5517DR2G
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC OPAMP TRANSCOND 2MHZ 16SOIC
Tape & Reel (TR) - 0°C ~ 70°C 16-SOIC (0.154",3.90mm Width) 16-SOIC 2 Surface Mount 2.6mA Transconductance 650μA 50 V/μs - 2MHz 400nA 400μV 4 V ~ 44 V,±2 V ~ 22 V
NE5517DR2G
ON Semiconductor
2,060
3 jours
-
MOQ: 1  MPQ: 1
IC OPAMP TRANSCOND 2MHZ 16SOIC
Cut Tape (CT) - 0°C ~ 70°C 16-SOIC (0.154",3.90mm Width) 16-SOIC 2 Surface Mount 2.6mA Transconductance 650μA 50 V/μs - 2MHz 400nA 400μV 4 V ~ 44 V,±2 V ~ 22 V
NE5517DG
ON Semiconductor
187
3 jours
-
MOQ: 1  MPQ: 1
IC OPAMP TRANSCOND 2MHZ 16SOIC
Tube - 0°C ~ 70°C 16-SOIC (0.154",3.90mm Width) 16-SOIC 2 Surface Mount 2.6mA Transconductance 650μA 50 V/μs - 2MHz 400nA 400μV 4 V ~ 44 V,±2 V ~ 22 V
AU5517DR2G
ON Semiconductor
Enquête
-
-
MOQ: 2500  MPQ: 1
IC OPAMP TRANSCOND 2MHZ 16SOIC
Tape & Reel (TR) - -40°C ~ 125°C 16-SOIC (0.154",3.90mm Width) 16-SOIC 2 Surface Mount 2.6mA Transconductance 650μA 50 V/μs - 2MHz 400nA 400μV 4 V ~ 44 V,±2 V ~ 22 V