Fabricant:
Number of Circuits:
Multiplexer/Demultiplexer Circuit:
Switch Circuit:
On-State Resistance (Max):
Channel-to-Channel Matching (ΔRon):
Charge Injection:
Current - Leakage (IS(off)) (Max):
Voltage - Supply, Single (V+):
Channel Capacitance (CS(off), CD(off)):
Découvrez les produits 19
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Operating Temperature Package / Case Supplier Device Package Number of Circuits -3db Bandwidth Multiplexer/Demultiplexer Circuit Switch Circuit On-State Resistance (Max) Channel-to-Channel Matching (ΔRon) Charge Injection Current - Leakage (IS(off)) (Max) Voltage - Supply, Single (V+) Switch Time (Ton, Toff) (Max) Channel Capacitance (CS(off), CD(off))
DG2523DN-T1-GE4
Vishay Siliconix
2,500
3 jours
-
MOQ: 2500  MPQ: 1
IC SWITCH DUAL SPDT 16QFN
Tape & Reel (TR) -40°C ~ 85°C (TA) 16-VFQFN Exposed Pad 16-QFN (3x3) 2 310MHz 0.08472222222222221 DPDT 550 mOhm 50 mOhm -19pC 1nA 1.8 V ~ 5.5 V 60μs,1μs -
DG2523DN-T1-GE4
Vishay Siliconix
3,606
3 jours
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL SPDT 16QFN
Cut Tape (CT) -40°C ~ 85°C (TA) 16-VFQFN Exposed Pad 16-QFN (3x3) 2 310MHz 0.08472222222222221 DPDT 550 mOhm 50 mOhm -19pC 1nA 1.8 V ~ 5.5 V 60μs,1μs -
DG2523DN-T1-GE4
Vishay Siliconix
3,606
3 jours
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL SPDT 16QFN
- -40°C ~ 85°C (TA) 16-VFQFN Exposed Pad 16-QFN (3x3) 2 310MHz 0.08472222222222221 DPDT 550 mOhm 50 mOhm -19pC 1nA 1.8 V ~ 5.5 V 60μs,1μs -
DGQ2788AEN-T1-GE4
Vishay Siliconix
3,000
3 jours
-
MOQ: 3000  MPQ: 1
IC SWITCH QD SPDT MINIQFN-16
Tape & Reel (TR) -40°C ~ 125°C (TA) 16-UFQFN 16-miniQFN (1.8x2.6) 2 338MHz 0.08472222222222221 DPDT 500 mOhm 50 mOhm -245pC - 1.8 V ~ 5.5 V 50μs,1μs -
DGQ2788AEN-T1-GE4
Vishay Siliconix
5,822
3 jours
-
MOQ: 1  MPQ: 1
IC SWITCH QD SPDT MINIQFN-16
Cut Tape (CT) -40°C ~ 125°C (TA) 16-UFQFN 16-miniQFN (1.8x2.6) 2 338MHz 0.08472222222222221 DPDT 500 mOhm 50 mOhm -245pC - 1.8 V ~ 5.5 V 50μs,1μs -
DGQ2788AEN-T1-GE4
Vishay Siliconix
5,822
3 jours
-
MOQ: 1  MPQ: 1
IC SWITCH QD SPDT MINIQFN-16
- -40°C ~ 125°C (TA) 16-UFQFN 16-miniQFN (1.8x2.6) 2 338MHz 0.08472222222222221 DPDT 500 mOhm 50 mOhm -245pC - 1.8 V ~ 5.5 V 50μs,1μs -
DG2519EDN-T1-GE4
Vishay Siliconix
Enquête
-
-
MOQ: 2500  MPQ: 1
HIGH BANDWIDTH,LOW VOLTAGE,DUAL
Tape & Reel (TR) -40°C ~ 85°C (TA) 10-VFDFN Exposed Pad 10-DFN (3x3) 2 217MHz 0.08402777777777777 SPDT 4 Ohm 500 mOhm 14pC - 1.8 V ~ 5.5 V 40ns,33ns -
DG2519EDN-T1-GE4
Vishay Siliconix
2,132
3 jours
-
MOQ: 1  MPQ: 1
HIGH BANDWIDTH,LOW VOLTAGE,DUAL
Cut Tape (CT) -40°C ~ 85°C (TA) 10-VFDFN Exposed Pad 10-DFN (3x3) 2 217MHz 0.08402777777777777 SPDT 4 Ohm 500 mOhm 14pC - 1.8 V ~ 5.5 V 40ns,33ns -
DG2519EDN-T1-GE4
Vishay Siliconix
2,132
3 jours
-
MOQ: 1  MPQ: 1
HIGH BANDWIDTH,LOW VOLTAGE,DUAL
- -40°C ~ 85°C (TA) 10-VFDFN Exposed Pad 10-DFN (3x3) 2 217MHz 0.08402777777777777 SPDT 4 Ohm 500 mOhm 14pC - 1.8 V ~ 5.5 V 40ns,33ns -
DG2519EDQ-T1-GE3
Vishay Siliconix
Enquête
-
-
MOQ: 2500  MPQ: 1
HIGH BANDWIDTH,LOW VOLTAGE,DUAL
Tape & Reel (TR) -40°C ~ 85°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP 2 217MHz 0.08402777777777777 SPDT 4 Ohm 500 mOhm 14pC - 1.8 V ~ 5.5 V 40ns,33ns -
DG2519EDQ-T1-GE3
Vishay Siliconix
2,490
3 jours
-
MOQ: 1  MPQ: 1
HIGH BANDWIDTH,LOW VOLTAGE,DUAL
Cut Tape (CT) -40°C ~ 85°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP 2 217MHz 0.08402777777777777 SPDT 4 Ohm 500 mOhm 14pC - 1.8 V ~ 5.5 V 40ns,33ns -
DG2519EDQ-T1-GE3
Vishay Siliconix
2,490
3 jours
-
MOQ: 1  MPQ: 1
HIGH BANDWIDTH,LOW VOLTAGE,DUAL
- -40°C ~ 85°C (TA) 10-TFSOP,10-MSOP (0.118",3.00mm Width) 10-MSOP 2 217MHz 0.08402777777777777 SPDT 4 Ohm 500 mOhm 14pC - 1.8 V ~ 5.5 V 40ns,33ns -
DG2788ADN-T1-GE4
Vishay Siliconix
Enquête
-
-
MOQ: 3000  MPQ: 1
IC ANLG SW 4CH SPDT 16MINI QFN
Tape & Reel (TR) -40°C ~ 85°C (TA) 16-UFQFN 16-miniQFN (1.8x2.6) 2 338MHz 0.08402777777777777 SPDT 500 mOhm 50 mOhm -245pC 100nA 1.8 V ~ 5.5 V 50μs,1μs -
DG2788ADN-T1-GE4
Vishay Siliconix
621
3 jours
-
MOQ: 1  MPQ: 1
IC ANLG SW 4CH SPDT 16MINI QFN
Cut Tape (CT) -40°C ~ 85°C (TA) 16-UFQFN 16-miniQFN (1.8x2.6) 2 338MHz 0.08402777777777777 SPDT 500 mOhm 50 mOhm -245pC 100nA 1.8 V ~ 5.5 V 50μs,1μs -
DG2525DN-T1-GE4
Vishay Siliconix
Enquête
-
-
MOQ: 3000  MPQ: 1
IC SWITCH DUAL DPDT 16-MINIQFN
Tape & Reel (TR) -40°C ~ 85°C (TA) 16-UFQFN 16-miniQFN (1.8x2.6) 2 310MHz 0.08472222222222221 DPDT 500 mOhm 50 mOhm -19pC 1nA 1.8 V ~ 5.5 V 60μs,1μs -
DG2525DN-T1-GE4
Vishay Siliconix
189
3 jours
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL DPDT QUAD SPDT
Cut Tape (CT) -40°C ~ 85°C (TA) 16-UFQFN 16-miniQFN (1.8x2.6) 2 310MHz 0.08472222222222221 DPDT 500 mOhm 50 mOhm -19pC 1nA 1.8 V ~ 5.5 V 60μs,1μs -
DG2525DN-T1-GE4
Vishay Siliconix
189
3 jours
-
MOQ: 1  MPQ: 1
IC SWITCH DUAL DPDT QUAD SPDT
- -40°C ~ 85°C (TA) 16-UFQFN 16-miniQFN (1.8x2.6) 2 310MHz 0.08472222222222221 DPDT 500 mOhm 50 mOhm -19pC 1nA 1.8 V ~ 5.5 V 60μs,1μs -
STG4158BJR
STMicroelectronics
Enquête
-
-
MOQ: 3000  MPQ: 1
IC SWITCH SPDT 6FLIPCHIP
Tape & Reel (TR) -40°C ~ 85°C (TA) 6-WFBGA,FCBGA 6-FlipChip (1.23x0.83) 1 40MHz 0.08402777777777777 SPDT 600 mOhm (Typ) 10 mOhm 230pC 30nA 1.65 V ~ 4.5 V 28ns,13ns 30pF
DG2788ADN-T1-E4
Vishay Siliconix
Enquête
-
-
MOQ: 6000  MPQ: 1
IC SWITCH DUAL SPDT MINIQFN16
Tape & Reel (TR) -40°C ~ 85°C (TA) 16-UFQFN 16-miniQFN (1.8x2.6) 2 338MHz 0.08402777777777777 SPDT 500 mOhm 50 mOhm -245pC 100nA 1.8 V ~ 5.5 V 50μs,1μs -