- Packaging:
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- Series:
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- Function:
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- Operating Temperature:
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- Package / Case:
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- Output:
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- Frequency:
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- Size / Dimension:
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- Height - Seated (Max):
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- Frequency Stability:
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- Current - Supply (Max):
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- Conditions sélectionnées:
Découvrez les produits 33
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Function | Operating Temperature | Package / Case | Output | Type | Frequency | Size / Dimension | Height - Seated (Max) | Frequency Stability | Current - Supply (Max) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Function | Operating Temperature | Package / Case | Output | Type | Frequency | Size / Dimension | Height - Seated (Max) | Frequency Stability | Current - Supply (Max) | ||
Epson |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
OSC VCTCXO 40MHZ SINE WAVE SMD
|
- | TG-5031CJ | - | -30°C ~ 85°C | 4-SMD,No Lead | Clipped Sine Wave | VCTCXO | 40MHz | 0.079" L x 0.063" W (2.00mm x 1.60mm) | 0.031" (0.80mm) | ±2ppm | 2mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -20°C ~ 70°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 24MHz | 0.098" L x 0.079" W (2.50mm x 2.00mm) | 0.035" (0.90mm) | ±50ppm | 6.3mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -20°C ~ 70°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 25MHz | 0.197" L x 0.126" W (5.00mm x 3.20mm) | 0.035" (0.90mm) | ±50ppm | 6.3mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -20°C ~ 70°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 25MHz | 0.197" L x 0.126" W (5.00mm x 3.20mm) | 0.035" (0.90mm) | ±50ppm | 6.3mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 85°C | 4-SMD,No Lead Exposed Pad | LVCMOS | MEMS (Silicon) | 25MHz | 0.276" L x 0.197" W (7.00mm x 5.00mm) | 0.035" (0.90mm) | ±25ppm | 6.3mA | ||||
Epson |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
OSC VCTCXO 40MHZ SINE WAVE SMD
|
- | TG-5031CJ | - | -30°C ~ 85°C | 4-SMD,No Lead | Clipped Sine Wave | VCTCXO | 40MHz | 0.079" L x 0.063" W (2.00mm x 1.60mm) | 0.031" (0.80mm) | ±2ppm | 2mA | ||||
Epson |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
OSC VCTCXO 40MHZ SINE WAVE SMD
|
- | TG-5031CJ | - | -30°C ~ 85°C | 4-SMD,No Lead | Clipped Sine Wave | VCTCXO | 40MHz | 0.079" L x 0.063" W (2.00mm x 1.60mm) | 0.031" (0.80mm) | ±2ppm | 2mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 85°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 13.5288MHz | 0.098" L x 0.079" W (2.50mm x 2.00mm) | 0.035" (0.90mm) | ±25ppm | 6.3mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 85°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 13.5288MHz | 0.098" L x 0.079" W (2.50mm x 2.00mm) | 0.035" (0.90mm) | ±25ppm | 6.3mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 105°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 27MHz | 0.098" L x 0.079" W (2.50mm x 2.00mm) | 0.035" (0.90mm) | ±50ppm | 7.1mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 85°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 24MHz | 0.126" L x 0.098" W (3.20mm x 2.50mm) | 0.035" (0.90mm) | ±25ppm | 6.3mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 105°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 27MHz | 0.098" L x 0.079" W (2.50mm x 2.00mm) | 0.035" (0.90mm) | ±50ppm | 7.1mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 85°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 24MHz | 0.126" L x 0.098" W (3.20mm x 2.50mm) | 0.035" (0.90mm) | ±25ppm | 6.3mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 85°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 100MHz | 0.126" L x 0.098" W (3.20mm x 2.50mm) | 0.035" (0.90mm) | ±25ppm | 11.9mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 105°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 66MHz | 0.126" L x 0.098" W (3.20mm x 2.50mm) | 0.035" (0.90mm) | ±25ppm | 7.1mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 85°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 80MHz | 0.126" L x 0.098" W (3.20mm x 2.50mm) | 0.035" (0.90mm) | ±25ppm | 11.9mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 85°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 80MHz | 0.126" L x 0.098" W (3.20mm x 2.50mm) | 0.035" (0.90mm) | ±25ppm | 11.9mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 105°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 80MHz | 0.098" L x 0.079" W (2.50mm x 2.00mm) | 0.035" (0.90mm) | ±25ppm | 11.9mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 105°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 80MHz | 0.098" L x 0.079" W (2.50mm x 2.00mm) | 0.035" (0.90mm) | ±25ppm | 11.9mA | ||||
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
MEMS OSCILLATOR,LOW POWER
|
- | - | Standby (Power Down) | -40°C ~ 85°C | 4-SMD,No Lead | LVCMOS | MEMS (Silicon) | 99.72MHz | 0.126" L x 0.098" W (3.20mm x 2.50mm) | 0.035" (0.90mm) | ±10ppm | 11.9mA |