Découvrez les produits 33
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Function Operating Temperature Package / Case Output Type Frequency Size / Dimension Height - Seated (Max) Frequency Stability Current - Supply (Max)
TG-5031CJ-20N 40.0000M0
Epson
Enquête
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-
MOQ: 1  MPQ: 1
OSC VCTCXO 40MHZ SINE WAVE SMD
- TG-5031CJ - -30°C ~ 85°C 4-SMD,No Lead Clipped Sine Wave VCTCXO 40MHz 0.079" L x 0.063" W (2.00mm x 1.60mm) 0.031" (0.80mm) ±2ppm 2mA
DSC1003DE1-024.0000
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -20°C ~ 70°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 24MHz 0.098" L x 0.079" W (2.50mm x 2.00mm) 0.035" (0.90mm) ±50ppm 6.3mA
DSC1003BE1-025.0000T
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -20°C ~ 70°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 25MHz 0.197" L x 0.126" W (5.00mm x 3.20mm) 0.035" (0.90mm) ±50ppm 6.3mA
DSC1003BE1-025.0000
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -20°C ~ 70°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 25MHz 0.197" L x 0.126" W (5.00mm x 3.20mm) 0.035" (0.90mm) ±50ppm 6.3mA
DSC1003AI2-025.0000
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 85°C 4-SMD,No Lead Exposed Pad LVCMOS MEMS (Silicon) 25MHz 0.276" L x 0.197" W (7.00mm x 5.00mm) 0.035" (0.90mm) ±25ppm 6.3mA
TG-5031CJ-20N 40.0000M3
Epson
Enquête
-
-
MOQ: 1  MPQ: 1
OSC VCTCXO 40MHZ SINE WAVE SMD
- TG-5031CJ - -30°C ~ 85°C 4-SMD,No Lead Clipped Sine Wave VCTCXO 40MHz 0.079" L x 0.063" W (2.00mm x 1.60mm) 0.031" (0.80mm) ±2ppm 2mA
TG-5031CJ-20N 40.0000MB
Epson
Enquête
-
-
MOQ: 1  MPQ: 1
OSC VCTCXO 40MHZ SINE WAVE SMD
- TG-5031CJ - -30°C ~ 85°C 4-SMD,No Lead Clipped Sine Wave VCTCXO 40MHz 0.079" L x 0.063" W (2.00mm x 1.60mm) 0.031" (0.80mm) ±2ppm 2mA
DSC1003DI2-013.5288T
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 85°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 13.5288MHz 0.098" L x 0.079" W (2.50mm x 2.00mm) 0.035" (0.90mm) ±25ppm 6.3mA
DSC1003DI2-013.5288
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 85°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 13.5288MHz 0.098" L x 0.079" W (2.50mm x 2.00mm) 0.035" (0.90mm) ±25ppm 6.3mA
DSC1003DL1-027.0000T
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 105°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 27MHz 0.098" L x 0.079" W (2.50mm x 2.00mm) 0.035" (0.90mm) ±50ppm 7.1mA
DSC1003CI2-024.0000T
Microchip Technology
Enquête
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-
MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 85°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 24MHz 0.126" L x 0.098" W (3.20mm x 2.50mm) 0.035" (0.90mm) ±25ppm 6.3mA
DSC1003DL1-027.0000
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 105°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 27MHz 0.098" L x 0.079" W (2.50mm x 2.00mm) 0.035" (0.90mm) ±50ppm 7.1mA
DSC1003CI2-024.0000
Microchip Technology
Enquête
-
-
MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 85°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 24MHz 0.126" L x 0.098" W (3.20mm x 2.50mm) 0.035" (0.90mm) ±25ppm 6.3mA
DSC1003CI2-100.0000
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 85°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 100MHz 0.126" L x 0.098" W (3.20mm x 2.50mm) 0.035" (0.90mm) ±25ppm 11.9mA
DSC1003CL2-066.0000
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 105°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 66MHz 0.126" L x 0.098" W (3.20mm x 2.50mm) 0.035" (0.90mm) ±25ppm 7.1mA
DSC1003CI2-080.0000T
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 85°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 80MHz 0.126" L x 0.098" W (3.20mm x 2.50mm) 0.035" (0.90mm) ±25ppm 11.9mA
DSC1003CI2-080.0000
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 85°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 80MHz 0.126" L x 0.098" W (3.20mm x 2.50mm) 0.035" (0.90mm) ±25ppm 11.9mA
DSC1003DL2-080.0000T
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 105°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 80MHz 0.098" L x 0.079" W (2.50mm x 2.00mm) 0.035" (0.90mm) ±25ppm 11.9mA
DSC1003DL2-080.0000
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 105°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 80MHz 0.098" L x 0.079" W (2.50mm x 2.00mm) 0.035" (0.90mm) ±25ppm 11.9mA
DSC1003CI5-099.7200T
Microchip Technology
Enquête
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MOQ: 1  MPQ: 1
MEMS OSCILLATOR,LOW POWER
- - Standby (Power Down) -40°C ~ 85°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 99.72MHz 0.126" L x 0.098" W (3.20mm x 2.50mm) 0.035" (0.90mm) ±10ppm 11.9mA