- Fabricant:
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- Packaging:
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- Series:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Technology:
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- Diode Type:
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- Voltage - Peak Reverse (Max):
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- Current - Average Rectified (Io):
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- Voltage - Forward (Vf) (Max) @ If:
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- Current - Reverse Leakage @ Vr:
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- Conditions sélectionnées:
Découvrez les produits 5,331
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Technology | Diode Type | Voltage - Peak Reverse (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | ||
Taiwan Semiconductor Corporation |
1,108
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
BRIDGE RECT 1PHASE 1KV 25A TS-6P
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,TS-6P | TS-6P | Through Hole | Standard | Single Phase | 1kV | 25A | 1.1V @ 1.5A | 10μA @ 1000V | ||||
ON Semiconductor |
300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GPP 12A 50V GBPC
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC | GBPC | Chassis Mount | Standard | Single Phase | 50V | 12A | 1.1V @ 6A | 5μA @ 50V | ||||
ON Semiconductor |
295
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GPP 15A 400V GBPC
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC | GBPC | Chassis Mount | Standard | Single Phase | 400V | 15A | 1.1V @ 7.5A | 5μA @ 400V | ||||
ON Semiconductor |
146
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GPP 25A 100V GBPC-W
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 100V | 25A | 1.1V @ 7.5A | 5μA @ 100V | ||||
Vishay Semiconductor Diodes Division |
1,036
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
RECTIFIER BRIDGE 20A 600V BU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,BU | isoCINK+? BU | Through Hole | Standard | Single Phase | 600V | 20A | 1.05V @ 10A | 5μA @ 600V | ||||
ON Semiconductor |
294
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GPP 25A 1000V GBPC-W
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 1kV | 25A | 1.1V @ 12.5A | 5μA @ 1000V | ||||
ON Semiconductor |
246
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GPP 15A 200V GBPC-W
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC-W | GBPC-W | Through Hole | Standard | Single Phase | 200V | 15A | 1.1V @ 7.5A | 5μA @ 200V | ||||
ON Semiconductor |
102
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE GPP 15A 1000V GBPC
|
Tray | - | -55°C ~ 150°C (TJ) | 4-Square,GBPC | GBPC | Chassis Mount | Standard | Single Phase | 1kV | 15A | 1.1V @ 7.5A | 5μA @ 1000V | ||||
Vishay Semiconductor Diodes Division |
1,283
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
RECTIFIER BRIDGE 25A 800V BU
|
Tube | - | -55°C ~ 150°C (TJ) | 4-SIP,BU | isoCINK+? BU | Through Hole | Standard | Single Phase | 800V | 25A | 1.05V @ 12.5A | 5μA @ 600V | ||||
Vishay Semiconductor Diodes Division |
804
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
RECTIFIER BRIDGE 800V 35A PB
|
Tube | - | -55°C ~ 150°C (TJ) | 4-ESIP,PB | isoCINK+? PB | Through Hole | Standard | Single Phase | 800V | 35A | 1.1V @ 17.5A | 10μA @ 800V | ||||
Vishay Semiconductor Diodes Division |
1,200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE 30A 600V ENHANCE PB
|
Tube | isoCink+ | -55°C ~ 150°C (TJ) | 4-ESIP,PB | isoCINK+? PB | Through Hole | Standard | Single Phase | 600V | 30A | 1.1V @ 15A | 10μA @ 600V | ||||
Vishay Semiconductor Diodes Division |
1,200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE 30A 1000V ENHANCE PB
|
Tube | isoCink+ | -55°C ~ 150°C (TJ) | 4-ESIP,PB | isoCINK+? PB | Through Hole | Standard | Single Phase | 1kV | 30A | 1.1V @ 15A | 10μA @ 1000V | ||||
Vishay Semiconductor Diodes Division |
1,191
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
RECT BRIDGE 40A 1000V ENHANCE PB
|
Tube | isoCink+ | -55°C ~ 150°C (TJ) | 4-ESIP,PB | isoCINK+? PB | Through Hole | Standard | Single Phase | 1kV | 40A | 1.1V @ 20A | 10μA @ 1000V | ||||
Vishay Semiconductor Diodes Division |
1,169
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
RECTIFIER BRIDGE 800V 40A PB
|
Tube | - | -55°C ~ 150°C (TJ) | 4-ESIP,PB | isoCINK+? PB | Through Hole | Standard | Single Phase | 800V | 40A | 1.1V @ 20A | 10μA @ 800V | ||||
Micro Commercial Co |
400
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
BRIDGE RECT 1PHASE 400V 35A GBPC
|
- | - | -55°C ~ 150°C | 4-Square,GBPC | GBPC | QC Terminal | Standard | Single Phase | 400V | 35A | 1.1V @ 17.5A | 5μA @ 400V | ||||
Vishay Semiconductor Diodes Division |
1,025
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
MOD BRIDGE 1PH 8A D-72
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-Square,D-72 | D-72 | Through Hole | Standard | Single Phase | 1kV | 8A | 1V @ 3A | 10μA @ 1000V | ||||
GeneSiC Semiconductor |
910
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DIODE BRIDGE 1000V 50A KBPC-T/W
|
Bulk | - | -55°C ~ 150°C (TJ) | 4-Square,KBPC-T | KBPC-T | Chassis Mount | Standard | Single Phase | 1kV | 50A | 1.1V @ 25A | 5μA @ 1000V | ||||
Bourns Inc. |
87,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DIODE BRIDGE RECTIFIER 200V NBS0
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 4-SMD,Gull Wing | NBS04 | Surface Mount | Standard | Single Phase | 200V | 800mA | 1.15V @ 400mA | 5μA @ 200V | ||||
Bourns Inc. |
4,758
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
DIODE BRIDGE RECTIFIER 200V NBS0
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 4-SMD,Gull Wing | NBS04 | Surface Mount | Standard | Single Phase | 200V | 800mA | 1.15V @ 400mA | 5μA @ 200V | ||||
Bourns Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
DIODE BRIDGE RECTIFIER 200V NBS0
|
- | - | -55°C ~ 150°C (TJ) | 4-SMD,Gull Wing | NBS04 | Surface Mount | Standard | Single Phase | 200V | 800mA | 1.15V @ 400mA | 5μA @ 200V |